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TSA18N50M - N-Channel MOSFET

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Truesemi

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TSA18N50M N-Channel MOSFET by Truesemi - Datasheet Preview — Datasheet preview – TSA18N50M

Datasheet Details

Part number	TSA18N50M
Manufacturer	Truesemi
File Size	345.28 KB
Description	N-Channel MOSFET
Datasheet	TSA18N50M Datasheet
Additional preview pages of the TSA18N50M datasheet.

Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

18.0A,500V,Max. RDS(on)=0.38Ω @ VGS =10V.
Low gate charge(typical 50nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC = 25℃ TC.

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Published: Apr 13, 2017 |