FQA11N90C Datasheet | Fairchild Semiconductor

FQA11N90C 900V N-Channel MOSFET September 2006 QFET 900V N-Channel MOSFET Features - - - - - - 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...