13003BDG Description
The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003BDG is suitable for electronic ballast power switch circuit and the pact electronic energy-saving light.
13003BDG Key Features
- High collector-base breakdown voltage
- Low reverse leakage current
- High reliability
- EQUIVALENT CIRCUIT
- ORDERING INFORMATION
- MARKING