4N90 Description
The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and munication mode.
4N90 Key Features
- RDS(ON) < 4.2Ω @ VGS=10V, ID=2.0A
- High switching speed
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
- MARKING