4N90 Datasheet | Specifications & PDF Download

FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N90 ·DESCRIPTION ·Drain Current ID= 3.6A@ TC=25℃ ·Drain Source Vol

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N90(

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Prelim

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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DK64N90 ® Pb Free Plating Product DK64N90 Pb N-Channel Trench Process Power MOSFET Transistors General Description DK64N90 series is N-channel M

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N90(

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www.DataSheet4U.com HISTORY Model Name : KV-HR29M61/HR29N90/ HR34M61/HR34N90 SERVICE MANUAL Part No. : 9-965-396-01 Change of main text – When click

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FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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Silicon N-Channel Power MOSFET ○R CS4N90 A3HD-G General Description： VDSS 900 CS4N90 A3HD-G, the silicon N-channel Enhanced ID 4 VDMOSFETs, is

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : R

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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AP4N90DIY 900V N-Channel Enhancement Mode MOSFET Description The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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