4N90 Datasheet | Specifications & PDF Download

FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N90 ·DESCRIPTION ·Drain Current ID= 3.6A@ TC=25℃ ·Drain Source Vol

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Prelim

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CS64N90 ® Pb Free Plating Product CS64N90 Pb 85V,92A N-Channel Trench Process Power MOSFET General Description CS64N90 series is N-channel MOS F

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FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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BL4N90 Power MOSFET 1．Description BL4N90, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the condu

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DK64N90 ® Pb Free Plating Product DK64N90 Pb N-Channel Trench Process Power MOSFET Transistors General Description DK64N90 series is N-channel M

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Prelim

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N

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S29GL-N MirrorBit® Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Te

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 14pF) • Imp

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STD4N90K5 N-channel 900 V, 1.90 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code STD4N90K5 VDS

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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