4N90 Datasheet | Specifications & PDF Download

FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N90 ·DESCRIPTION ·Drain Current ID= 3.6A@ TC=25℃ ·Drain Source Vol

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Prelim

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CS64N90 ® Pb Free Plating Product CS64N90 Pb 85V,92A N-Channel Trench Process Power MOSFET General Description CS64N90 series is N-channel MOS F

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 14pF) • Imp

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UNISONIC TECHNOLOGIES CO., LTD 4N90 4A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanc

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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Silan Microelectronics SVF4N90F/MJ/T/D_Datasheet 4A, 900V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode pow

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FQPF4N90 October 2001 QFET FQPF4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 14pF) • Imp

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that

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FQP4N90 October 2001 QFET FQP4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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AP4N90DIY 900V N-Channel Enhancement Mode MOSFET Description The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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S29GL-N MirrorBit® Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Te

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS ID 4.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.3Ω Qg-Typ 14.7nC Package  .  LED

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