UF640-P Description
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies.
UF640-P Key Features
- RDS(ON) =0.18Ω@ VGS=10V, ID=10A
- Ultra Low gate charge (typical 43nC)
- Low reverse transfer capacitance (CRSS = typical 100 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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