UF730-E Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF730-E Key Features
- RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A
- Avalanche Energy Specified
- Rugged
- SOA is Power Dissipation Limited
- Fast Switching Capability
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION