UTM2513 Description
UNISONIC TECHNOLOGIES CO., LTD UTM2513 N-CHANNEL ENHANCEMENT MODE Power MOSFET.
UTM2513 Key Features
- RDS(ON) = 10.5mΩ(typ.) @VGS = 10 V
- RDS(ON) = 16mΩ(typ.) @VGS = 4.5 V
- Low capacitance
- Optimized gate charge
- Fast switching capability
- Avalanche energy specified
- SYMBOL
- ORDERING INFORMATION