CHA2090 Datasheet | United Monolithic Semiconductors

Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard 0.25µm gate length p HEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features Broadband performance 17-24GHz 2.0d B noise figure 23d B gain, ± 1d B gain flatness Low DC power consumption, 55m A Chip size: 2,17 x 1,27 x 0.1mm 30 12 25 10 20 8 15 6 10 4 52 00 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 Frequency ( GHz ) On wafer typical measurements Main Characteristics Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND Symbol Parameter Min Typ Max Fop Operating frequency range 17 24 NF Noise figure 2.0 3.0 G Gain 19 23 VSWRin Input VSWR 2:1 VSWRout Output VSWR 2:1 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Unit GHz d B d B Ref. : DSCHA20909347-13 Dec 99 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03...