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CHA2260-QAG - 18-27GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA2260-QAG is a low noise amplifier monolithic circuit, which integrates 3-stages self biased.

It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length.

Features

  • Broadband performance: 18-27GHz.
  • 26dB Gain.
  • 2.2dB Noise Figure.
  • 13dBm Pout.
  • 23dBm Output IP3.
  • DC bias: Vd=3.5Volt@Id=65mA.
  • 16L-QFN3x3.
  • MSL1 Noise Figure 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 3.0 V 3.5 V 1.2 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 18 27 GHz 26 dB 2.2.

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Datasheet Details

Part number CHA2260-QAG
Manufacturer United Monolithic Semiconductors
File Size 485.59 KB
Description 18-27GHz Low Noise Amplifier
Datasheet download datasheet CHA2260-QAG Datasheet
Additional preview pages of the CHA2260-QAG datasheet.

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Full PDF Text Transcription

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UMS A368687A YYWWG CHA2260-QAG UMS A366878A YYWWG 18-27GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2260-QAG is a low noise amplifier monolithic circuit, which integrates 3-stages self biased. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length. It is supplied in RoHS compliant SMD package. YAYU3WY6MYA68WUW278SMYW2AA6YSGU30W6M68W78SAG NF (dB) UMS A368687A YYWWG Main Features ■ Broadband performance: 18-27GHz ■ 26dB Gain ■ 2.2dB Noise Figure ■ 13dBm Pout ■ 23dBm Output IP3 ■ DC bias: Vd=3.5Volt@Id=65mA ■ 16L-QFN3x3 ■ MSL1 Noise Figure 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 3.0 V 3.5 V 1.
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