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CHA2266 - 12.5-17GHz Low-Noise Driver Amplifier

Datasheet Summary

Description

The CHA2266 is a self biased, low-noise high gain driver amplifier.

It is designed mainly for VSAT applications in Kuband.

The backside of the chip is both RF and DC grounded.

Features

  • Broadband performance 12.5.
  • 17GHz 2.5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0.1mm Gain & Return loss / dB ( Vds = 4V, Ids = 130mA ) 40 35 30 25 20 15 MS11 MS21 MS22 NF 10 5 4,1 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Frequency / GHz Main Characteristics Tamb=+25°C Symbol Parameter Fop G NF P1dB Operating frequency range.

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Datasheet Details

Part number CHA2266
Manufacturer United Monolithic Semiconductors
File Size 145.16 KB
Description 12.5-17GHz Low-Noise Driver Amplifier
Datasheet download datasheet CHA2266 Datasheet
Additional preview pages of the CHA2266 datasheet.

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Full PDF Text Transcription

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CHA2266 RoHS COMPLIANT 12.5-17GHz Low-Noise Driver Amplifier GaAs Monolithic Microwave IC Description The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Kuband. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs pHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN VD 1 VD 2 OUT Main Features Broadband performance 12.5–17GHz 2.5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0.
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