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CHA3396-QDG Datasheet 27-33.5ghz Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3396-QDG 27-33.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless.

General Description

The CHA3396-QDG is a 3 stage monolithic Medium Power Amplifier, which produces 22dB gain for 19dBm output power.

It is designed for a wide range of applications, from military to mercial munication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances: 27-33.5GHz.
  • 19dBm Pout at 1dB compression.
  • 22dB gain.
  • 30dBm OTOI.
  • DC bias: Vd= 4.0V, Id= 155mA.
  • 24L-QFN4x4 (QDG).
  • MSL1 Output power (dBm), PAE (%) Output Power & PAE versus Frequency 30 28 26 24 22 20 18 16 14 Psat P-1dB PAE sat 12 10 23 24 25 26 27 28 29 30 31 32 33 34 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power.

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CHA3396-QDG Distributor