Datasheet4U Logo Datasheet4U.com

CHA3511-99F - Amplifier

General Description

by a double stage travelling wave amplifier.

applications.

both RF and DC grounded.

Key Features

  • Wide Band: 6-18GHz.
  • 16dB gain.
  • 39dB isolation.
  • 22 dBm saturated output power.
  • DC power consumption, 190mA @ 4.5V.
  • Chip size: 3.55 x 2.30 x 0.1mm dBS21 (dB) 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz Typical on wafer Measurements Gain versus switch states Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range Min Typ Max Unit 6 18 GHz G Small signal gain @ Switch on 15 16 dB.

📥 Download Datasheet

Datasheet Details

Part number CHA3511-99F
Manufacturer United Monolithic Semiconductors
File Size 654.14 KB
Description Amplifier
Datasheet download datasheet CHA3511-99F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHA3080-98F 71 ~ 76 GHz Medium Power Amplifier UMS
CHA-20NF (CHA-20xx) Coaxial Attenuators Component General
CHA-20NM (CHA-20xx) Coaxial Attenuators Component General
CHA-20NMF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SF (CHA-20xx) Coaxial Attenuators Component General

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA3511 GaAs Monolithic Microwave
CHA3512 GaAs Monolithic Microwave
CHA3512-99F Low Noise Digital Variable Amplifier
CHA3513 GaAs Monolithic Microwave
CHA3513-99F 3-bit Digital Variable Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA3511-99F 6-18GHz Amplifier GaAs Monolithic Microwave IC Description E2 RF IN The CHA3511-99F is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. F The circuit is manufactured with a Power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. AB RF OUT DC Main Features  Wide Band: 6-18GHz  16dB gain  39dB isolation  22 dBm saturated output power  DC power consumption, 190mA @ 4.5V  Chip size: 3.55 x 2.30 x 0.