CHA3511-99F Datasheet Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3511-99F 6-18GHz Amplifier GaAs Monolithic Microwave IC.

Datasheet Details

Part number	CHA3511-99F
Manufacturer	United Monolithic Semiconductors
File Size	654.14 KB
Description	Amplifier
Datasheet	CHA3511-99F-UnitedMonolithicSemiconductors.pdf

E2 RF IN The CHA3511-99F is posed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier.

It is designed for defence, naval, or avionic applications.

The backside of the chip is both RF and DC grounded.

Wide Band: 6-18GHz.
16dB gain.
39dB isolation.
22 dBm saturated output power.
DC power consumption, 190mA @ 4.5V.
Chip size: 3.55 x 2.30 x 0.1mm dBS21 (dB) 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz Typical on wafer Measurements Gain versus switch states Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range Min Typ Max Unit 6 18 GHz G Small signal gain @ Switch on 15 16 dB.

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