CHA3511-99F
CHA3511-99F is Amplifier manufactured by United Monolithic Semiconductors.
6-18GHz Amplifier
Ga As Monolithic Microwave IC
Description
E2
RF IN
The CHA3511-99F is posed of a Single
Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier.
It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a Power p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
RF OUT
Main Features
- Wide Band: 6-18GHz
- 16d B gain
- 39d B isolation
- 22 d Bm saturated output power
- DC power consumption, 190m A @ 4.5V
- Chip size: 3.55 x 2.30 x 0.1mm d BS21 (d B)
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Frequency GHz
Typical on wafer Measurements Gain versus switch states
Main Characteristics
Tamb. = 25°C
Symbol
Parameter...
