CHA3656-FAB Description
The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier. It is dedicated to space munications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA3656-FAB Key Features
- Broadband performances: 5.8-16GHz
- 14.5dBm power at 1dB gain pression
- 1.75dB Noise Figure
- 20dB Linear Gain
- DC bias: Vd1=Vd2=3.3V, Id=70mA
- 20 Leads-SMD
- 6x6mm² hermetic metal ceramic package
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec