Part CHA3656-FAB
Description Low Noise Amplifier
Manufacturer United Monolithic Semiconductors
Size 1.03 MB
United Monolithic Semiconductors
CHA3656-FAB

Overview

The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier. It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications.

  • Broadband performances: 5.8-16GHz
  • 14.5dBm power at 1dB gain compression
  • 1.75dB Noise Figure
  • 20dB Linear Gain
  • DC bias: Vd1=Vd2=3.3V, Id=70mA
  • 20 Leads-SMD
  • 6x6mm² hermetic metal ceramic package Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range
  • 8 16 GHz Gain Linear Gain 20 dB NF Noise Figure
  • 75 dB Pout Output Power @1dB comp.
  • 5 dBm ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA3656-FAB0301 - 27 Oct 20 1/18