CHA3656-FAB Datasheet | United Monolithic Semiconductors

5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD Hermetic package Description The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier. It is dedicated to space munications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a surface mount hermetic package. Main Features - Broadband performances: 5.8-16GHz - 14.5dBm power at 1dB gain pression - 1.75dB Noise Figure - 20dB Linear Gain - DC...