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CHA3656-FAB Datasheet Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3656-FAB 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD Hermetic.

General Description

The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier.

It is dedicated to space munications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances: 5.8-16GHz.
  • 14.5dBm power at 1dB gain compression.
  • 1.75dB Noise Figure.
  • 20dB Linear Gain.
  • DC bias: Vd1=Vd2=3.3V, Id=70mA.
  • 20 Leads-SMD.
  • 6x6mm² hermetic metal ceramic package Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 5.8 16 GHz Gain Linear Gain 20 dB NF Noise Figure 1.75 dB Pout Output Power @1dB comp. 14.5 dBm ESD Protection: Electrostatic discharge sensitive dev.

More Datasheets from United Monolithic Semiconductors

Part Number Description
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CHA3666-99F Low Noise Amplifier
CHA3666-FAA 6-16GHz Low Noise Amplifier
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CHA3667A 7-20GHz Medium Power Amplifier
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CHA3656-FAB Distributor