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CHA3656-FAB - Low Noise Amplifier

General Description

The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier.

It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications.

Key Features

  • Broadband performances: 5.8-16GHz.
  • 14.5dBm power at 1dB gain compression.
  • 1.75dB Noise Figure.
  • 20dB Linear Gain.
  • DC bias: Vd1=Vd2=3.3V, Id=70mA.
  • 20 Leads-SMD.
  • 6x6mm² hermetic metal ceramic package Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 5.8 16 GHz Gain Linear Gain 20 dB NF Noise Figure 1.75 dB Pout Output Power @1dB comp. 14.5 dBm ESD Protection: Electrostatic discharge sensitive dev.

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Datasheet Details

Part number CHA3656-FAB
Manufacturer United Monolithic Semiconductors
File Size 1.03 MB
Description Low Noise Amplifier
Datasheet download datasheet CHA3656-FAB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3656-FAB 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD Hermetic package Description The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier. It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a surface mount hermetic package. Main Features ■ Broadband performances: 5.8-16GHz ■ 14.5dBm power at 1dB gain compression ■ 1.75dB Noise Figure ■ 20dB Linear Gain ■ DC bias: Vd1=Vd2=3.