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CHA3656-QAG

Manufacturer: United Monolithic Semiconductors

CHA3656-QAG datasheet by United Monolithic Semiconductors.

CHA3656-QAG datasheet preview

CHA3656-QAG Datasheet Details

Part number CHA3656-QAG
Datasheet CHA3656-QAG-UnitedMonolithicSemiconductors.pdf
File Size 791.30 KB
Manufacturer United Monolithic Semiconductors
Description 5.8-17GHz Low Noise Amplifier
CHA3656-QAG page 2 CHA3656-QAG page 3

CHA3656-QAG Overview

The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA3656-QAG Key Features

  • Broadband performances: 5.8- 17GHz
  • 1.7dB noise figure
  • 24dBm 3rd order intercept point
  • 14dBm power at 1dB pression
  • 20dB gain
  • Low DC power consumption
  • 16L-QFN3X3 SMD package
  • 27 Oct 20
  • Parc Mosaic
  • 10, Avenue du Québec
United Monolithic Semiconductors logo - Manufacturer

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CHA3656-QAG Distributor

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