Datasheet4U Logo Datasheet4U.com

CHA3656-QAG Datasheet 5.8-17ghz Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3656-QAG UMS A366878A YYWWG UMS A368687A YWWG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless.

General Description

The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier.

It is designed for a wide range of applications, from military to mercial munication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances: 5.8- 17GHz.
  • 1.7dB noise figure.
  • 24dBm 3rd order intercept point.
  • 14dBm power at 1dB compression.
  • 20dB gain.
  • Low DC power consumption.
  • 16L-QFN3X3 SMD package Gain & Noise figure (dB) 28 26 24 22 20 18 16 14 12 Gain NF 10 8 6 4 2 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure P1dB Outp.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA3656-FAB Low Noise Amplifier
CHA3660-QQG 21-27.5GHz Medium Power Amplifier
CHA3664-QAG 5-21GHz Driver Amplifier
CHA3665-QAG 5-21GHz Driver Amplifier
CHA3666 GaAs Monolithic Microwave
CHA3666-99F Low Noise Amplifier
CHA3666-FAA 6-16GHz Low Noise Amplifier
CHA3666-FAB Low Noise Amplifier
CHA3667A 7-20GHz Medium Power Amplifier
CHA3667aQDG 7-20GHz Medium Power Amplifier

CHA3656-QAG Distributor