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CHA3656-QAG - 5.8-17GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • Broadband performances: 5.8- 17GHz.
  • 1.7dB noise figure.
  • 24dBm 3rd order intercept point.
  • 14dBm power at 1dB compression.
  • 20dB gain.
  • Low DC power consumption.
  • 16L-QFN3X3 SMD package Gain & Noise figure (dB) 28 26 24 22 20 18 16 14 12 Gain NF 10 8 6 4 2 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure P1dB Outp.

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Datasheet Details

Part number CHA3656-QAG
Manufacturer United Monolithic Semiconductors
File Size 791.30 KB
Description 5.8-17GHz Low Noise Amplifier
Datasheet download datasheet CHA3656-QAG Datasheet
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CHA3656-QAG UMS A366878A YYWWG UMS A368687A YWWG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMUMSSUMS A36A683786AA53666878A YYYWYWWWYYGWWG Gain & NF (dB) UMS A368687A YYWWG Main Features ■ Broadband performances: 5.8- 17GHz ■ 1.
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