Datasheet Details
| Part number | CHA3688aQDG |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 1.05 MB |
| Description | Low Noise Amplifier |
| Datasheet |
 CHA3688aQDG Datasheet
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General Description
The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
Key Features
- Broadband performances: 12.5-30GHz.
- 2.1dB noise figure.
- 26dB gain.
- 26dBm Output IP3.
- DC bias: Vd = 4V @ Id = 85 / 115mA.
- 24L-QFN4x4.
- MSL1 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OIP3 3rd order intercept point (16 - 30GHz) Min Typ Max Unit 12.5 30 GHz 21 26 dB 2.1 2.5 dB 24 26 dBm Ref. : DSCHA3688aQDG0301 - 27 Oct 20 1/18 Specifications subject to change without no.