• Part: CHA3688aQDG
  • Manufacturer: United Monolithic Semiconductors
  • Size: 1.05 MB
Download CHA3688aQDG Datasheet PDF
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CHA3688aQDG Description

The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS pliant SMD package.

CHA3688aQDG Key Features

  • Broadband performances: 12.5-30GHz
  • 2.1dB noise figure
  • 26dB gain
  • 26dBm Output IP3
  • DC bias: Vd = 4V @ Id = 85 / 115mA
  • 24L-QFN4x4
  • 30GHz)
  • 27 Oct 20
  • Parc Mosaic
  • 10, Avenue du Québec