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CHA4092 - 20-30GHz High Power Amplifier

This page provides the datasheet information for the CHA4092, a member of the CHA4092REF 20-30GHz High Power Amplifier family.

Datasheet Summary

Description

The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • þ Broadband performances : 20-30GHz þ 22 dBm output power ( 1dB gain comp. ) þ 17 dB ± 1.5 dB gain þ Chip size : 1.65 X 2.15 X 0.10 mm 20 15 10 5 0 Gain (dB) -5 -10 -15 -20 -25 -30 15 20 25 30 35 IN OUT Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 20 16 Typ Max 30 Unit GHz dB dBm 17 22 700 900 mA ESD Protection : Electrostatic discharge sensitive d.

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Datasheet preview – CHA4092

Datasheet Details

Part number CHA4092
Manufacturer United Monolithic Semiconductors
File Size 87.33 KB
Description 20-30GHz High Power Amplifier
Datasheet download datasheet CHA4092 Datasheet
Additional preview pages of the CHA4092 datasheet.

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Full PDF Text Transcription

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CHA4092 20-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Typical on wafer measurements : Main Features þ Broadband performances : 20-30GHz þ 22 dBm output power ( 1dB gain comp. ) þ 17 dB ± 1.5 dB gain þ Chip size : 1.65 X 2.15 X 0.10 mm 20 15 10 5 0 Gain (dB) -5 -10 -15 -20 -25 -30 15 20 25 30 35 IN OUT Frequency (GHz) Main Characteristics Tamb.
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