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CHA4094 Datasheet 36-40ghz High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier.

It is designed for a wide range of applications, from military to mercial munication systems.

The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances.
  • 22 dBm output power ( 1dB gain comp. ).
  • 9 dB ± 1 dB gain.
  • Chip size : 1.65 X 2.05 X 0.10 mm Typical on wafer measurements : 15 10 5 0 -5 -10 (dB)-15 -20 -25 -30 28 Gain OUT IN 30 32 34 36 38 40 Frequency (GHz) 42 Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain P1dB Output power at 1dB gain compression Id Bias current Min Typ Max Unit 36 40 GHz 79 dB 22 dBm 750 920 mA ESD Protect.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA4092 20-30GHz High Power Amplifier
CHA4042 23-34GHz High Power Amplifier
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CHA4105-QDG 2-4GHz Driver
CHA4107-99F 4.5-6.5GHz Medium Power Amplifier
CHA4107-QDG C-band Medium Power Amplifier
CHA4220-98F 0.5-20GHz Driver
CHA4220-QGG 0.5-20GHz Driver
CHA4250-QDG 5.5-11GHz Medium Power Amplifier

CHA4094 Distributor