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CHA4107-QDG - C-band Medium Power Amplifier

Datasheet Summary

Description

The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-Band applications.

The MPA provides typically 25.5dBm output power associated to 30% power added efficiency at 1dB gain compression.

It is supplied in RoHS compliant SMD package.

Features

  •  Frequency band: 4.5-6.5GHz  Output power: 25.5dBm @ 1dBcomp  Linear gain: 22.5dB  High PAE: 30% @ 1dBcomp  Quiescent bias point: Vd=8V, Id=120mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 45 43 41 39 37 35 33 31 29 27 25 23 21 19 17 15 4 25 23 21 19 17 15 13 11 PAE_1dBc @ Temp=25°C 9 Pout_1dBc @ Temp=25°C 7 Linear Gain @ Temp=25°C 5 4.5 5 5.5 6 6.5 Frequency (GHz) Gain (dB) Main Characteristics Tamb = 25°C, Vd = 8V, Id (Quiescent) = 120mA, Drain Pulse width= 50µs, Du.

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Datasheet Details

Part number CHA4107-QDG
Manufacturer United Monolithic Semiconductors
File Size 564.00 KB
Description C-band Medium Power Amplifier
Datasheet download datasheet CHA4107-QDG Datasheet
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CHA4107-QDG C-band Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-Band applications. The MPA provides typically 25.5dBm output power associated to 30% power added efficiency at 1dB gain compression. It is supplied in RoHS compliant SMD package. UUMMS S AA4316068787A YYYWYWWWG Main Features  Frequency band: 4.5-6.5GHz  Output power: 25.5dBm @ 1dBcomp  Linear gain: 22.5dB  High PAE: 30% @ 1dBcomp  Quiescent bias point: Vd=8V, Id=120mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 45 43 41 39 37 35 33 31 29 27 25 23 21 19 17 15 4 25 23 21 19 17 15 13 11 PAE_1dBc @ Temp=25°C 9 Pout_1dBc @ Temp=25°C 7 Linear Gain @ Temp=25°C 5 4.5 5 5.5 6 6.
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