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CHA4250-QDG - 5.5-11GHz Medium Power Amplifier

Datasheet Summary

Description

The CHA4250-QDG is a three stages monolithic GaAs medium power amplifier circuit.

It is designed for commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.5µm gate length.

Features

  • Broadband performances: 5.5-11GHz.
  • 26dB Linear Gain.
  • 23.5dBm output power @1dB comp.
  • 31dBm output TOI.
  • 25% PAE@ 1dB compression.
  • DC bias: Vd=7Volt@Id=125mA.
  • 24L-QFN4x4 Gain & Return Losses (dB) 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 2 Gain & RLoss S11 S21 S22 7 12 Frequency (GHz) 17 22 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp. Min Typ Max.

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Datasheet Details

Part number CHA4250-QDG
Manufacturer United Monolithic Semiconductors
File Size 507.85 KB
Description 5.5-11GHz Medium Power Amplifier
Datasheet download datasheet CHA4250-QDG Datasheet
Additional preview pages of the CHA4250-QDG datasheet.

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Full PDF Text Transcription

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CHA4250-QDG 5.5-11GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4250-QDG is a three stages monolithic GaAs medium power amplifier circuit. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features ■ Broadband performances: 5.5-11GHz ■ 26dB Linear Gain ■ 23.5dBm output power @1dB comp. ■ 31dBm output TOI ■ 25% PAE@ 1dB compression ■ DC bias: Vd=7Volt@Id=125mA ■ 24L-QFN4x4 Gain & Return Losses (dB) 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 2 Gain & RLoss S11 S21 S22 7 12 Frequency (GHz) 17 22 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp.
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