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CHA4253-FAB Datasheet Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA4253-FAB 17- 21GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD Hermetic.

General Description

The CHA4253-FAB is a four stage monolithic GaAs Medium Power Amplifier circuit delivering 23.5dBm output power at 1dB pression point.

It is designed for a wide range of applications, mercial space, military and mercial munication systems.

The circuit is manufactured with an internal robust space evaluated 0.15µm gate length pHEMT process.

Key Features

  • Broadband performances: 17- 21GHz.
  • 23.5dBm Pout for 1dB gain compression.
  • 26dB Linear Gain.
  • 33dBm Output IP3.
  • DC bias: Vd= 4.0V, Id= 230mA.
  • 20Leads-SMD.
  • 6x6mm² metal ceramic hermetic package Output power & PAE versus Frequency Psat OP1dB PAE@1dB Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp. OIP3 3rd order Intercept point Min Typ Max Unit 17.0 21.0 GHz 26 dB 23.

CHA4253-FAB Distributor