CHA4253-FAB Datasheet PDF - United Monolithic Semiconductors Medium Power Amplifier Specs

CHA4253-FAB - Medium Power Amplifier

Datasheet Summary

Description

The CHA4253-FAB is a four stage monolithic GaAs Medium Power Amplifier circuit delivering 23.5dBm output power at 1dB compression point.

It is designed for a wide range of applications, commercial space, military and commercial communication systems.

Features

Broadband performances: 17- 21GHz.
23.5dBm Pout for 1dB gain compression.
26dB Linear Gain.
33dBm Output IP3.
DC bias: Vd= 4.0V, Id= 230mA.
20Leads-SMD.
6x6mm² metal ceramic hermetic package Output power & PAE versus Frequency Psat OP1dB PAE@1dB Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp. OIP3 3rd order Intercept point Min Typ Max Unit 17.0 21.0 GHz 26 dB 23.

Datasheet Details

Part number	CHA4253-FAB
Manufacturer	United Monolithic Semiconductors
File Size	1.12 MB
Description	Medium Power Amplifier
Datasheet	CHA4253-FAB Datasheet
Additional preview pages of the CHA4253-FAB datasheet.

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Full PDF Text Transcription

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CHA4253-FAB 17- 21GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD Hermetic package Description The CHA4253-FAB is a four stage monolithic GaAs Medium Power Amplifier circuit delivering 23.5dBm output power at 1dB compression point. It is designed for a wide range of applications, commercial space, military and commercial communication systems. The circuit is manufactured with an internal robust space evaluated 0.15µm gate length pHEMT process. It is supplied in a hermetic package. UMS A4253 YYWW ## SSS Main Features ■ Broadband performances: 17- 21GHz ■ 23.5dBm Pout for 1dB gain compression ■ 26dB Linear Gain ■ 33dBm Output IP3 ■ DC bias: Vd= 4.

Published: Jan 26, 2025 |