CHA5115-QDG - X-band Medium Power Amplifier

Product Overview

United Monolithic Semiconductors

Part number	CHA5115-QDG
Manufacturer	United Monolithic Semiconductors
File Size	838.27 KB
Description	X-band Medium Power Amplifier
Datasheet	CHA5115-QDG Datasheet
Additional preview pages of the CHA5115-QDG datasheet.

The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

 Frequency band: 8-12GHz  Output power: 28dBm @ 3dBcomp  Linear gain: 21.5dB  High PAE: 30% @ 3dBcomp  Quiescent bias point: Vd=8V, Id=190mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 35 33 31 29 27 25 23 21 19 17 15 7 25 23 21 19 17 15 13 PAE_3dBcomp @ Temp=25°C 11 Pout_3dBcomp @ Temp=25°C 9 Linear Gain @ Temp=25°C 7 5 8 9 10 11 12 13 Frequency (GHz) Gain (dB) Main Characteristics Tamb = 20°C, Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width=100µs, Duty cycle = 20% S.

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Published: Nov 28, 2016 |