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CHA5115-QDG - X-band Medium Power Amplifier

Datasheet Summary

Description

The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

The MPA provides typically 28dBm output power associated to 30% power added efficiency at 3dB gain compression.

It is supplied in RoHS compliant SMD package.

Features

  •  Frequency band: 8-12GHz  Output power: 28dBm @ 3dBcomp  Linear gain: 21.5dB  High PAE: 30% @ 3dBcomp  Quiescent bias point: Vd=8V, Id=190mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 35 33 31 29 27 25 23 21 19 17 15 7 25 23 21 19 17 15 13 PAE_3dBcomp @ Temp=25°C 11 Pout_3dBcomp @ Temp=25°C 9 Linear Gain @ Temp=25°C 7 5 8 9 10 11 12 13 Frequency (GHz) Gain (dB) Main Characteristics Tamb = 20°C, Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width=100µs, Duty cycle = 20% S.

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Datasheet Details

Part number CHA5115-QDG
Manufacturer United Monolithic Semiconductors
File Size 838.27 KB
Description X-band Medium Power Amplifier
Datasheet download datasheet CHA5115-QDG Datasheet
Additional preview pages of the CHA5115-QDG datasheet.

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CHA5115-QDG X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added efficiency at 3dB gain compression. It is supplied in RoHS compliant SMD package. UUMMS S AA5316168785A YYYYWWWWG Main Features  Frequency band: 8-12GHz  Output power: 28dBm @ 3dBcomp  Linear gain: 21.
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