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CHA5659-QXG - Power Amplifier

Datasheet Summary

Description

The CHA5659-QXG is a four stage monolithic GaAs high power amplifier producing 1 Watt output power.

It is highly linear, with possible gain control and integrates a power detector.

ESD protections are included.

Features

  • Broadband performances: 40-43.5GHz.
  • 30dBm saturated power.
  • 38.5dBm OIP3.
  • 20dB gain.
  • DC bias: Vd = 6.0Volt @ Idq = 0.8A.
  • QFN5x6.
  • MSL3 Output power vs frequency Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 40.0 43.5 GHz 20 dB 30 dBm 38.5 dBm Ref. : DSCHA5659-QXG0301 - 27 Oct 20 1/16 Specifications subject to change without noti.

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Datasheet Details

Part number CHA5659-QXG
Manufacturer United Monolithic Semiconductors
File Size 920.03 KB
Description Power Amplifier
Datasheet download datasheet CHA5659-QXG Datasheet
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CHA5659-QXG 40-43.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5659-QXG is a four stage monolithic GaAs high power amplifier producing 1 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio or K-band SatCom applications. The CHA5659-QXG is recommended with the CHA3398-QDG as a driver. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package. UMS A5659 YYWW 36 leads 6x5mm QFN package Main Features ■ Broadband performances: 40-43.5GHz ■ 30dBm saturated power ■ 38.5dBm OIP3 ■ 20dB gain ■ DC bias: Vd = 6.0Volt @ Idq = 0.
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