CHA5659-QXG Datasheet Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5659-QXG 40-43.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless.

Datasheet Details

Part number	CHA5659-QXG
Manufacturer	United Monolithic Semiconductors
File Size	920.03 KB
Description	Power Amplifier
Datasheet	CHA5659-QXG-UnitedMonolithicSemiconductors.pdf

The CHA5659-QXG is a four stage monolithic GaAs high power amplifier producing 1 Watt output power.

It is highly linear, with possible gain control and integrates a power detector.

ESD protections are included.

Broadband performances: 40-43.5GHz.
30dBm saturated power.
38.5dBm OIP3.
20dB gain.
DC bias: Vd = 6.0Volt @ Idq = 0.8A.
QFN5x6.
MSL3 Output power vs frequency Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 40.0 43.5 GHz 20 dB 30 dBm 38.5 dBm Ref. : DSCHA5659-QXG0301 - 27 Oct 20 1/16 Specifications subject to change without noti.

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