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CHA6250-QFG - 5.5-9GHz Power Amplifier

Datasheet Summary

Description

The CHA6250-QFG is a three stages monolithic GaAs high power circuit that produces more than 2 Watt output power.

It is designed for commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.5µm gate length.

Features

  • Broadband performances: 5.5- 9GHz.
  • 23.5dB Linear Gain.
  • 33.5dBm output power @1dB comp.
  • 43dBm output TOI.
  • 29% PAE@ 1dB compression.
  • DC bias: Vd=7Volt@Id=0.9A.
  • 32L-QFN5x5 36 Output power at 1dB comp. 35 34 Output P1dB (dB) 33 32 31 Temp=25°C Temp=-40°C Temp=+85°C 30 29 28 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power.

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Datasheet preview – CHA6250-QFG

Datasheet Details

Part number CHA6250-QFG
Manufacturer United Monolithic Semiconductors
File Size 418.15 KB
Description 5.5-9GHz Power Amplifier
Datasheet download datasheet CHA6250-QFG Datasheet
Additional preview pages of the CHA6250-QFG datasheet.

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Full PDF Text Transcription

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CHA6250-QFG 5.5-9GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6250-QFG is a three stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features ■ Broadband performances: 5.5- 9GHz ■ 23.5dB Linear Gain ■ 33.5dBm output power @1dB comp. ■ 43dBm output TOI ■ 29% PAE@ 1dB compression ■ DC bias: Vd=7Volt@Id=0.9A ■ 32L-QFN5x5 36 Output power at 1dB comp. 35 34 Output P1dB (dB) 33 32 31 Temp=25°C Temp=-40°C Temp=+85°C 30 29 28 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Frequency (GHz) Main Electrical Characteristics Tamb.
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