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CHA6252-QFG - 13-15.5GHz Power Amplifier

Datasheet Summary

Description

The CHA6252-QFG is a four stages monolithic GaAs high power circuit that produces more than 2 Watt output power.

It is designed for commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.5µm gate length.

Features

  • 36 Output power at 1dB comp. 35 OP1dB (dB) @3 Temperatures.
  • Broadband performances: 13-15.5GHz.
  • 22dB Linear Gain.
  • 32.5dBm output power @1dB comp.
  • 41dBm output TOI.
  • 22% PAE@1dB compression.
  • DC bias: Vd=7Volt @ Id=1.1A.
  • 32L-QFN5x5 34 33 32 31 30 29 28 27 26 Temp=25°C Temp=-40°C Temp=+85°C 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output.

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Datasheet Details

Part number CHA6252-QFG
Manufacturer United Monolithic Semiconductors
File Size 451.89 KB
Description 13-15.5GHz Power Amplifier
Datasheet download datasheet CHA6252-QFG Datasheet
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CHA6252-QFG 13-15.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6252-QFG is a four stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features 36 Output power at 1dB comp. 35 OP1dB (dB) @3 Temperatures ■ Broadband performances: 13-15.5GHz ■ 22dB Linear Gain ■ 32.5dBm output power @1dB comp. ■ 41dBm output TOI ■ 22% PAE@1dB compression ■ DC bias: Vd=7Volt @ Id=1.1A ■ 32L-QFN5x5 34 33 32 31 30 29 28 27 26 Temp=25°C Temp=-40°C Temp=+85°C 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Main Electrical Characteristics Tamb.
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