The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CHA6005-QEG
Pout @ 1dBcomp (dBm) & Linear Gain (dB)
Idrain @ 1dBcomp (A)
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a RoHS compliant SMD package.
Main Features
■ High power: 31.