• Part: CHA6015-99F
  • Description: 2-8GHz High Power Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 1.05 MB
Download CHA6015-99F Datasheet PDF
CHA6015-99F page 2
Page 2
CHA6015-99F page 3
Page 3

Datasheet Summary

2-8GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6015-99F is a HPA that provides typically 37.5dBm output power on the frequency band 2-8GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features - Broadband performances: 2-8GHz - Linear Gain: 18.5dB - Pout at 3dB pression : 37.5dBm - PAE at 3dB pression : 29% - DC bias: Vd=7Volt@Id=2A - Chip size: 4.68x6.53x0.07mm Main Electrical...