Datasheet Details
| Part number | CHA7010 |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 264.28 KB |
| Description | X-band GaInP HBT High Power Amplifier |
| Datasheet |
 CHA7010 Datasheet
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General Description
The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.
A nitride layer protects the transistors and the passive components.
Key Features
- 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature compensated Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Main Characteristics Tamb = +25°C Vctr Vc Symbol Parameter Min Typ F_op Operating frequency range 8.4 9.4 P_sat Saturated output power 10 P_1dBc Output power @ 1dBc 8 G_lin Linear gain 18 ESD Prot.