CHA7010 Datasheet | United Monolithic Semiconductors

RoHS PLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive ponents. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: - the backside of the chip is both RF and DC grounded - bond pads and back side are gold plated for patibility with eutectic die attach method and thermosonic or thermopression bonding...