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CHA7010 - X-band GaInP HBT High Power Amplifier

Datasheet Summary

Description

The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.

A nitride layer protects the transistors and the passive components.

Features

  • 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature compensated Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Main Characteristics Tamb = +25°C Vctr Vc Symbol Parameter Min Typ F_op Operating frequency range 8.4 9.4 P_sat Saturated output power 10 P_1dBc Output power @ 1dBc 8 G_lin Linear gain 18 ESD Prot.

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Datasheet Details

Part number CHA7010
Manufacturer United Monolithic Semiconductors
File Size 264.28 KB
Description X-band GaInP HBT High Power Amplifier
Datasheet download datasheet CHA7010 Datasheet
Additional preview pages of the CHA7010 datasheet.

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Full PDF Text Transcription

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CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
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