CHA7010 Datasheet X-band Gainp Hbt High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA7010 RoHS PLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA7010
Manufacturer	United Monolithic Semiconductors
File Size	264.28 KB
Description	X-band GaInP HBT High Power Amplifier
Datasheet	CHA7010_UnitedMonolithicSemiconductors.pdf

The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.

A nitride layer protects the transistors and the passive ponents.

10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature compensated Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Main Characteristics Tamb = +25°C Vctr Vc Symbol Parameter Min Typ F_op Operating frequency range 8.4 9.4 P_sat Saturated output power 10 P_1dBc Output power @ 1dBc 8 G_lin Linear gain 18 ESD Prot.

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