CHA7012 Datasheet X-band Hbt High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA7012
Manufacturer	United Monolithic Semiconductors
File Size	604.20 KB
Description	X-band HBT High Power Amplifier
Datasheet	CHA7012_UnitedMonolithicSemiconductors.pdf

The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed ..

for X band applications.

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge.

Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Pout (dBm @ 3dBc Linear Gain (Pin=0dBm) 24 20 1 6 9 9.2 9.4 9.6 9.8 1 0 1 0.2 1 0.4 1 0.6 Main Characteristics Pout & PAE @3dBc and Linear Gain (Temperature 25°C) Frequency ( G H z) Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20% Symbol.

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