CHA7012 Datasheet | United Monolithic Semiconductors

X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed .. for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive ponents. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: -the backside of the chip is both RF and DC grounded -bond pads and back side are gold plated for patibility with eutectic die attach method and thermosonic or thermopression bonding...