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CHA7012 - X-band HBT High Power Amplifier

Datasheet Summary

Description

The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed www.DataSheet4U.com for X band applications.

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge.

Features

  • Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Pout (dBm @ 3dBc Linear Gain (Pin=0dBm) 24 20 1 6 9 9.2 9.4 9.6 9.8 1 0 1 0.2 1 0.4 1 0.6 Main Characteristics Pout & PAE @3dBc and Linear Gain (Temperature 25°C) Frequency ( G H z) Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20% Symbol.

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Datasheet Details

Part number CHA7012
Manufacturer United Monolithic Semiconductors
File Size 604.20 KB
Description X-band HBT High Power Amplifier
Datasheet download datasheet CHA7012 Datasheet
Additional preview pages of the CHA7012 datasheet.

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Full PDF Text Transcription

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CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed www.DataSheet4U.com for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: -the backside of the chip is both RF and DC grounded -bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
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