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CHE1270a99F - Detector

Datasheet Summary

Description

integrates a matched detection diode (Vdet).

used in differential mode (Vref).

Features

  • Wide frequency range 5-44GHz.
  • 30dB dynamic range.
  • ESD protected.
  • Chip size: 1.41 x 0.89 x 0.1mm Transmitted power detection (mV) 10000 1000 10GHz 22GHz 40GHz 11GHz 27GHz 42GHz 12GHz 32GHz 44GHz 17GHz 37GHz 100 Vdetect= Vref-Vdet (mV) 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input power (dBm) Main Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Dr Dynamic range RL Return Loss Min Typ Max Unit 5 44 GHz 30 dB -10.

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Datasheet Details

Part number CHE1270a99F
Manufacturer United Monolithic Semiconductors
File Size 268.95 KB
Description Detector
Datasheet download datasheet CHE1270a99F Datasheet
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Full PDF Text Transcription

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CHE1270a99F 5 - 44GHz Detector GaAs Monolithic Microwave IC Description The CHE1270a99F is a detector that integrates a matched detection diode (Vdet). RF IN A reference diode is also available to be Matching used in differential mode (Vref). It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via Vdet Vref holes through the substrate and air bridges. It is available in chip form. DC Main Features ■ Wide frequency range 5-44GHz ■ 30dB dynamic range ■ ESD protected ■ Chip size: 1.41 x 0.89 x 0.
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