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CHK015A-QIA - 15W Power Packaged Transistor

General Description

The CHK015A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

It offers general purpose and broadband solutions for a variety of RF power applications.

It is well suited for multi-purpose applications such as radar and telecommunication.

Key Features

  • Wide band capability: up to 6GHz.
  • Pulsed and CW operating modes.
  • High power: > 15W.
  • High Efficiency: up to 70%.
  • DC bias: Vd=50Volt @ Id=100mA.
  • Low cost package: 14L-DFN3x4.
  • MTTF > 106 hours @ Tj=200°C VDS = 50V, ID_Q = 100mA, Freq = 2.9GHz Pulsed mode (100µs, 10%) Gain (dB), Pout (dBm) & PAE (%) Drain Current (A) 55 1.8 50 1.6 45 1.4 40 Pout 35 1.2 1 30 PAE 25 20 15 ID Gain 0.8 0.6 0.4 0.2 10 0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Input P.

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Datasheet Details

Part number CHK015A-QIA
Manufacturer United Monolithic Semiconductors
File Size 625.69 KB
Description 15W Power Packaged Transistor
Datasheet download datasheet CHK015A-QIA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHK015A-QIA 15W Power Packaged Transistor GaN HEMT on SiC Description The CHK015A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHK015A-QIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in low cost plastic package providing low parasitic and low thermal resistance.