CHK015A-QIA Overview
Description
The CHK015A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications.
Key Features
- Wide band capability: up to 6GHz
- Pulsed and CW operating modes
- High power: > 15W
- High Efficiency: up to 70%
- DC bias: Vd=50Volt @ Id=100mA
- Low cost package: 14L-DFN3x4
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- 1.9 ID_Q ID_MAX Quiescent Drain Current Drain Current 0.1 0.65 IG_MAX Gate Current (forward mode) Tj_MAX Junction temperature(1) (1) P
