Datasheet4U Logo Datasheet4U.com

CHK015AaQIA - 15W Power Packaged Transistor

Datasheet Summary

Description

The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

It offers general purpose and broadband solutions for a variety of RF power applications.

It is well suited for multi-purpose applications such as radar and telecommunication.

Features

  • Wide band capability: up to 4GHz.
  • Pulsed and CW operating modes.
  • GaN technology: High Pout & High PAE.
  • DC bias: VDS up to 50V.
  • Low cost package: 14L-DFN3x4.
  • MTTF > 106 hours @ Tj = 200°C.
  • RoHS N°2011/65.
  • REACh N°1907/2006 VDS = 50V, ID_Q = 75mA, Freq = 2.9GHz Pulsed mode (1ms, 10%) 55 1.8 PAE 50 1.6 45 Pout 1.4 40 1.2 35 1 ID 30 0.8 25 0.6 20 Gain 0.4 15 0.2 10 0 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) Gain (dB), Pout (d.

📥 Download Datasheet

Datasheet preview – CHK015AaQIA

Datasheet Details

Part number CHK015AaQIA
Manufacturer United Monolithic Semiconductors
File Size 815.41 KB
Description 15W Power Packaged Transistor
Datasheet download datasheet CHK015AaQIA Datasheet
Additional preview pages of the CHK015AaQIA datasheet.

📁 Similar Datasheet

  • CHK0501 - Li-ion battery charging chip (CHK)
  • CHK0501 - Rechargeable lithium-chip IT (Infinitrue)
  • CHK0501A - Li-ion battery charging chip (CHK)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHK015AaQIA 15W Power Packaged Transistor GaN HEMT on SiC in SMD leadless package Description The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHK015AaQIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in low cost plastic package providing low parasitic and low thermal resistance.
Published: |