CHK015AaQIA Datasheet 15w Power Packaged Transistor

Manufacturer: United Monolithic Semiconductors

Overview: CHK015AaQIA 15W Power Packaged Transistor GaN HEMT on SiC in SMD leadless.

Datasheet Details

Part number	CHK015AaQIA
Manufacturer	United Monolithic Semiconductors
File Size	815.41 KB
Description	15W Power Packaged Transistor
Datasheet	CHK015AaQIA-UnitedMonolithicSemiconductors.pdf

The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

It offers general purpose and broadband solutions for a variety of RF power applications.

It is well suited for multi-purpose applications such as radar and telemunication.

Wide band capability: up to 4GHz.
Pulsed and CW operating modes.
GaN technology: High Pout & High PAE.
DC bias: VDS up to 50V.
Low cost package: 14L-DFN3x4.
MTTF > 106 hours @ Tj = 200°C.
RoHS N°2011/65.
REACh N°1907/2006 VDS = 50V, ID_Q = 75mA, Freq = 2.9GHz Pulsed mode (1ms, 10%) 55 1.8 PAE 50 1.6 45 Pout 1.4 40 1.2 35 1 ID 30 0.8 25 0.6 20 Gain 0.4 15 0.2 10 0 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) Gain (dB), Pout (d.