CHK015AaQIA Description
The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telemunication.
CHK015AaQIA Key Features
- Wide band capability: up to 4GHz
- Pulsed and CW operating modes
- GaN technology: High Pout & High PAE
- DC bias: VDS up to 50V
- Low cost package: 14L-DFN3x4
- MTTF > 106 hours @ Tj = 200°C
- RoHS N°2011/65
- REACh N°1907/2006
- 27 Oct 20
- Parc Mosaic
CHK015AaQIA Applications
- Wide band capability: up to 4GHz