CHK8101a99F Description
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telemunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is pliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die...
CHK8101a99F Key Features
- Wide band capability up to 6GHz
- Pulsed and CW operating modes
- GaN technology: High Pout & High PAE
- DC bias: VDS up to 50V
- Chip size: 1.05x1.55x0.1mm
- RoHS N°2011/65
- REACh N°1907/2006
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
CHK8101a99F Applications
- Wide band capability up to 6GHz