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CHK8101a99F - 20W Power Bar

Datasheet Summary

Description

The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

Features

  • Wide band capability up to 6GHz.
  • Pulsed and CW operating modes.
  • GaN technology: High Pout & High PAE.
  • DC bias: VDS up to 50V.
  • Chip size: 1.05x1.55x0.1mm.
  • RoHS N°2011/65.
  • REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 6GHz, VDS = 50V, ID_Q = 100mA Symbol Parameter Min Typ GSS Small Signal Gain 14 PSAT Saturated Output Power 20 PAE Max Power Added Efficiency 60 GPAE_MAX Associated Gain at Max PAE 10 These values.

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Datasheet Details

Part number CHK8101a99F
Manufacturer United Monolithic Semiconductors
File Size 547.51 KB
Description 20W Power Bar
Datasheet download datasheet CHK8101a99F Datasheet
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CHK8101a99F 20W Power Bar GaN HEMT on SiC Description The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die form and requires an external matching circuitry. Main Features ■ Wide band capability up to 6GHz ■ Pulsed and CW operating modes ■ GaN technology: High Pout & High PAE ■ DC bias: VDS up to 50V ■ Chip size: 1.05x1.55x0.
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