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CHK8101a99F Datasheet 20w Power Bar

Manufacturer: United Monolithic Semiconductors

Overview: CHK8101a99F 20W Power Bar GaN HEMT on SiC.

General Description

The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telemunication.

It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is pliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die form and requires an external matching circuitry.

Key Features

  • Wide band capability up to 6GHz.
  • Pulsed and CW operating modes.
  • GaN technology: High Pout & High PAE.
  • DC bias: VDS up to 50V.
  • Chip size: 1.05x1.55x0.1mm.
  • RoHS N°2011/65.
  • REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 6GHz, VDS = 50V, ID_Q = 100mA Symbol Parameter Min Typ GSS Small Signal Gain 14 PSAT Saturated Output Power 20 PAE Max Power Added Efficiency 60 GPAE_MAX Associated Gain at Max PAE 10 These values.

More Datasheets from United Monolithic Semiconductors

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CHKA012a99F 140W Power Bar

CHK8101a99F Distributor