CHK8101a99F Overview
Description
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.
Key Features
- Wide band capability up to 6GHz
- Pulsed and CW operating modes
- GaN technology: High Pout & High PAE
- DC bias: VDS up to 50V
- Chip size: 1.05x1.55x0.1mm
- RoHS N°2011/65
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
