Datasheet Details
| Part number | CHKA012a99F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 516.05 KB |
| Description | 140W Power Bar |
| Datasheet |
 CHKA012a99F Datasheet
|
|
|
General Description
The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.
Key Features
- Wide band capability up to 4GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VDS up to 50V.
- Chip size: 1x4.84x0.1mm.
- RoHS N°2011/65.
- REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 3GHz, VDS = 50V, ID_Q = 640mA Symbol Parameter Min Typ GSS Small Signal Gain 19 PSAT Saturated Output Power 140 PAE Max Power Added Efficiency 76 GPAE_MAX Associated Gain at Max PAE 14 These values ar.