CHKA012a99F Datasheet | United Monolithic Semiconductors

140W Power Bar GaN HEMT on SiC Description The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telemunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is pliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die form and requires an external matching circuitry. Main Features - Wide band capability up to 4GHz - Pulsed and CW operating modes - GaN technology: High Pout & High PAE - DC bias: VDS up to 50V - Chip size:...