Datasheet4U Logo Datasheet4U.com

CHM1080-98F - 71-86GHz Single Side Band Mixer

Datasheet Summary

Description

buffer.

Baseband configuration.

Features

  • Broadband RF performances: 71-86GHz.
  • -11dB Conversion Gain.
  • 40dB 2LO isolation.
  • 10dBm Input Power at 1dB compression.
  • DC bias: Vd=3.5V @Id=90mA.
  • Chip size 3.43x1.5x0.07mm Conversion Gain (dB) Conversion Gain -5 -6 -7 -8 USB LSB -9 -10 -11 -12 -13 -14 -15 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 RF Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter FRF RF Frequency FIF IF frequency Gc Conversion gain RFin P1.

📥 Download Datasheet

Datasheet preview – CHM1080-98F

Datasheet Details

Part number CHM1080-98F
Manufacturer United Monolithic Semiconductors
File Size 455.88 KB
Description 71-86GHz Single Side Band Mixer
Datasheet download datasheet CHM1080-98F Datasheet
Additional preview pages of the CHM1080-98F datasheet.

📁 Similar Datasheet

  • CHM1608U - MULTILAYER CERAMIC BALUN (TOKO)
  • CHM2362PT - N-Channel 60V MOSFET (VBsemi)
  • CHM3178JPT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
  • CHM4060APAPT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
  • CHM41A2NPT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
  • CHM41A2PAPT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
  • CHM4204PAPT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
  • CHM4228JPT - Dual N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
  • CHM4269JPT - Dual Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
  • CHM4282JPT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHM1080-98F 71-86GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1080-98F is a multifunction monolithic mixer, which integrates a balanced sub-harmonic cold FET mixer, with a LO buffer. It is usable both for up-conversion and down-conversion and also compatible with GX Baseband configuration. D It is designed for the E-band telecommunication application, particularly G well suited for the new generation of high capacity backhaul. LO_IN The circuit is manufactured with a pHEMT process, 0.10µm gate length. It is available in chip form. RF Q I Main Features ■ Broadband RF performances: 71-86GHz ■ -11dB Conversion Gain ■ 40dB 2LO isolation ■ 10dBm Input Power at 1dB compression ■ DC bias: Vd=3.5V @Id=90mA ■ Chip size 3.43x1.5x0.
Published: |