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CHM1191 - GaAs Monolithic Microwave IC

Datasheet Summary

Description

The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure.

It could be use in receiver or transmitter part.

This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography.

Features

  • 22-24 GHz LO frequency range.
  • IF from 1 to 3 GHz.
  • Low conversion loss up & down.
  • High LO/RF isolation.
  • Low LO input power.
  • Small chip size: 1.73 x 1.53 x 0.10 mm Typical conversion characteristic (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol F_LO, F_IF Lc I_LO/RF Parameter LO frequency range IF frequency range Conversion loss @ P-LO = 7dBm LO/RF isolation Typ 22-24 1-3 7 30 Unit GHz GHz dB dBc ESD Protection : Electrostatic discharge.

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Datasheet Details

Part number CHM1191
Manufacturer United Monolithic Semiconductors
File Size 90.78 KB
Description GaAs Monolithic Microwave IC
Datasheet download datasheet CHM1191 Datasheet
Additional preview pages of the CHM1191 datasheet.

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Full PDF Text Transcription

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CHM1191 K Band Mixer GaAs Monolithic Microwave IC Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. An electrically identical chip with a mirror drawing versus de LO side is available under the part number CHM1190. These two MMICs could be helpful in a TX, RX architecture module. It is available in chip form.
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