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CHM2179A - W-band Mixer

General Description

The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure.

This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography.

It is available in chip form.

W-ban

Key Features

  • -7,5 -10 -12,5 -15 75 75,5 76 76,5 77 77,5 78 LO Frequency (GHz) Typical conversion characteristic LO power = 5dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol F_LO,F_RF F_IF Lc I_LO/RF N_IF Parameter LO,RF frequency range IF frequency range Conversion loss LO/RF isolation IF noise density @ 100kHz Typ 76-77 DC-100 7.5 20 -158 Unit GHz MHz dB dB dBm/Hz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. :.

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Datasheet Details

Part number CHM2179A
Manufacturer United Monolithic Semiconductors
File Size 82.85 KB
Description W-band Mixer
Datasheet download datasheet CHM2179A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. LO RF IF -5 ■ W-band LO and RF frequency range ■ Low conversion loss ■ IF from DC to 100MHz ■ High LO/RF isolation ■ High LO/AM noise rejection ■ Very low IF noise ■ Low LO input power ■ Small chip size: 1.53 x 1.17 x 0.10 mm Conversion loss (dB) Main Features -7,5 -10 -12,5 -15 75 75,5 76 76,5 77 77,5 78 LO Frequency (GHz) Typical conversion characteristic LO power = 5dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb.