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CHS5100 - DC-20GHz Reflective SPDT Switch

Datasheet Summary

Description

The CHS5100 is a wideband monolithic FET based reflective switch manufactured on a standard power process using 0.7µm implanted active layer MESFET, via holes, air bridges and electron beam gate lithography.

This wideband switch is suitable for ultra broadband ECM and EW systems.

Features

  • þ Broadband performance : DC-20GHz þ Low insertion loss : 2.1dB@20GHz þ High isolation : 53dB@1GHz 30dB@20GHz þ Excellent input and output matching: VSWR < 1.5:1 þ Chip size : 1,92 x 1,22 x 0.1mm Main Characteristics Tamb = +25°C Symbol Il Parameter On state insertion loss 1/9Er reur! Docu ment princ ipal seule ment . Min Typ Max 2.5 Unit dB Ref. : DSCHS51006354 Specifications subject to change without notice United Monolithic Semiconductors S. A. S. Route Départementale 128 - B. P.46 - 914.

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Datasheet Details

Part number CHS5100
Manufacturer United Monolithic Semiconductors
File Size 115.59 KB
Description DC-20GHz Reflective SPDT Switch
Datasheet download datasheet CHS5100 Datasheet
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CHS5100 DC-20GHz Reflective SPDT Switch GaAs Monolithic Microwave IC Description The CHS5100 is a wideband monolithic FET based reflective switch manufactured on a standard power process using 0.7µm implanted active layer MESFET, via holes, air bridges and electron beam gate lithography. This wideband switch is suitable for ultra broadband ECM and EW systems. It can also be used in instrumentation and wideband signal processing applications. Available in chip form V2 V1 IN Out 2 Out 1 Main Features þ Broadband performance : DC-20GHz þ Low insertion loss : 2.1dB@20GHz þ High isolation : 53dB@1GHz 30dB@20GHz þ Excellent input and output matching: VSWR < 1.5:1 þ Chip size : 1,92 x 1,22 x 0.
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