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CHV1203-FAB - Low Phase Noise S band HBT VCO

General Description

buffer amplifiers.

phase noise of 108dBc/Hz at 100kHz offset.

Key Features

  • S-band VCO + S buffers.
  • Fully integrated VCO (no need for external resonator).
  • Low phase noise.
  • High frequency stability.
  • On chip self-biased devices.
  • 6x6mm² hermetic metal ceramic package Frequency (GHz) 3.3 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 Temp. =-40°C Temp. =25°C 2.4 Temp. =85°C 2.3 0 2 4 6 8 10 Vtune (Volts) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit F_out Output frequency range on RF_out port 2.6 3 GH.

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Datasheet Details

Part number CHV1203-FAB
Manufacturer United Monolithic Semiconductors
File Size 440.17 KB
Description Low Phase Noise S band HBT VCO
Datasheet download datasheet CHV1203-FAB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHV1203-FAB Low Phase Noise S band HBT VCO GaAs Monolithic Microwave IC in SMD leadless package Description The CHV1203-FAB is a low phase noise S-band HBT Voltage Controlled Oscillator integrating negative resistor, varactors and buffer amplifiers. It provides an excellent phase noise of 108dBc/Hz at 100kHz offset. It is designed for a wide range of applications, from space to commercial communication systems. The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. VT It is available in leadless surface mount hermetic metal ceramic 6x6mm² package. It is supplied in RoHS compliant SMD package.