CHZ015A-QEG Datasheet 15w L-band Driver

Manufacturer: United Monolithic Semiconductors

Overview: CHZ015A-QEG 15W L-Band Driver GaN HEMT on Sic in SMD leadless.

Datasheet Details

Part number	CHZ015A-QEG
Manufacturer	United Monolithic Semiconductors
File Size	969.67 KB
Description	15W L-Band Driver
Datasheet	CHZ015A-QEG-UnitedMonolithicSemiconductors.pdf

The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band.

The circuit is well suited for pulsed radar application.

Wide band capability: 1.2 - 1.4GHz.
Pulsed operating mode.
High power: > 15W.
High PAE: up to 55%.
DC bias: VDS=45V @ I D_Q=100mA.
Low cost package: 24L-QFN4x5.
MTTF > 106 hours @ Tj=200°C VDS = 45V, ID_Q = 100mA, Pin = 28dBm Pulsed mode (25µs-10%) Performances on the connector access planes Main Electrical Characteristics Tamb. = +25°C, pulsed mode Symbol Parameter Freq Frequency range GSS POUT PAE Small Signal Gain Output Power Max Power Added Effici.

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