CHZ015AaQEG Overview
Description
The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band.
Key Features
- Wide band capability: 1.2 - 1.4GHz
- Pulsed operating mode
- High power: > 15W
- High PAE: up to 60%
- DC bias: VDS=45V @ I D_Q=100mA
- Low cost package: 24L-QFN4x5
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- 1.9 50 ID_MAX Drain Current 750 IG_MAX Gate Current (forward mode) 0 PW Pulse width DC Duty cycle 10 Top Operating temperature range
