Datasheet Details
| Part number | CHZ015AaQEG |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 971.26 KB |
| Description | 15W L-Band Driver |
| Datasheet |
 CHZ015AaQEG Datasheet
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General Description
The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in L-band.
The circuit is well suited for pulsed radar application.
Key Features
- Wide band capability: 1.2 - 1.4GHz.
- Pulsed operating mode.
- High power: > 15W.
- High PAE: up to 60%.
- DC bias: VDS=45V @ I D_Q=100mA.
- Low cost package: 24L-QFN4x5.
- MTTF > 106 hours @ Tj=200°C Pout (dBm) & PAE (%) @ 28dBm Gain(dB) @10dBm VDS = 45V, ID_Q = 100mA, Pin = 28dBm Pulsed mode (1ms-10%) 64 32 PAE@28dBm 60 30 56 28 52 26 48 24 44 Pout@28dBm 22 40 Gain@10dBm 20 36 18 32 16 28 14 1.1 1.2 1.3 1.4 1.5 1.6 Frequency (GHz) Perfor.