CHZ015AaQEG Description
The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application.
CHZ015AaQEG Key Features
- Wide band capability: 1.2
- 1.4GHz
- Pulsed operating mode
- High power: > 15W
- High PAE: up to 60%
- DC bias: VDS=45V @ I D_Q=100mA
- Low cost package: 24L-QFN4x5
- MTTF > 106 hours @ Tj=200°C
- 27 Oct 20
- Parc Mosaic