CHZ015AaQEG Datasheet | United Monolithic Semiconductors

CHZ015Aa QEG 15W L-Band Driver Ga N HEMT on Sic in SMD leadless package Description The CHZ015Aa QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015Aa QEG is proposed on a 0.5µm gate length Ga N HEMT process. It is based on Quasi MMIC technology. It is supplied in Ro HS pliant SMD package. UMS Z015Aa YYWW Main Features - Wide band capability: 1.2 - 1.4GHz - Pulsed operating mode - High power: > 15W - High PAE: up to 60% - DC bias: VDS=45V @ I D_Q=100m A - Low cost package: 24L-QFN4x5 - MTTF > 106 hours @ Tj=200°C Pout (d Bm) & PAE (%) @ 28d Bm Gain(d B) @10d Bm VDS = 45V, ID_Q = 100m A, Pin = 28d Bm Pulsed mode (1ms-10%) PAE@28d Bm Pout@28d Bm Gain@10d Bm Frequency (GHz) Performances on the connector access planes Main Electrical Characteristics Tamb.= +25°C, pulsed mode, VDS=45V, ID_Q=100m A Symbol Parameter Freq Frequency range GSS POUT PAE Small Signal Gain Output Power Max Power Added Efficiency Id SAT Saturated Drain...