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EC2612 - 40GHz Super Low Noise PHEMT

Description

The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.

Features

  • low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required. Main Features.
  • 0.8dB minimum noise figure @ 18GHz.
  • 1.5dB minimum noise figure @ 40GHz.
  • 12dB associated gain @ 18GHz.
  • 9.5dB associated gain @ 40GHz.
  • Chip size: 0.63 x 0.37 x 0.1 mm D: Drain G: Gate S: Source Mai.

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Datasheet preview – EC2612

Datasheet Details

Part number EC2612
Manufacturer United Monolithic Semiconductors
File Size 134.26 KB
Description 40GHz Super Low Noise PHEMT
Datasheet download datasheet EC2612 Datasheet
Additional preview pages of the EC2612 datasheet.

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Full PDF Text Transcription

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EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection.Only gate and drain wires bounding are required. Main Features ■ 0.8dB minimum noise figure @ 18GHz ■ 1.5dB minimum noise figure @ 40GHz ■ 12dB associated gain @ 18GHz ■ 9.5dB associated gain @ 40GHz ■ Chip size: 0.63 x 0.37 x 0.
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