EC2612 Description
The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate.
EC2612 Key Features
- 0.8dB minimum noise figure @ 18GHz
- 1.5dB minimum noise figure @ 40GHz
- 12dB associated gain @ 18GHz
- 9.5dB associated gain @ 40GHz
- Chip size: 0.63 x 0.37 x 0.1 mm
- B.P.46
- 91401 Orsay Cedex France
- Fax : +33 (0)1 69 33 03 09
- 1.0 -0.7 -0.3 V