UF3N170400B7S Datasheet | UnitedSiC

Silicon Carbide (SiC) JFET EliteSiC, Power N-Channel, D2PAK-7L, 1700 V, 400 mohm Rev. C, January 2025 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. 1 7 Tab G (1) KS (2) D (Tab) S (3-7) Features w Typical on-resistance RDS(on),typ of 400mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast...