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UF3N170400B7S - SiC JFET

General Description

transistors.

This Series Exhibits Ultra-low on resistance (RDS(ON)) and Gate charge (QG) allowing for Low Conduction and Switching loss.

Key Features

  • Typical On-Resistance RDS(on), typ of 400 mW.
  • Voltage Controlled.
  • Maximum Operating Temperature of 175 C.
  • Extremely Fast Switching not Dependent on Temperature.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, D2PAK-7L, 1700 V, 400 mohm UF3N170400B7S Description onsemi offers the High-Performance G3 SiC normally-On JFET transistors. This Series Exhibits Ultra-low on resistance (RDS(ON)) and Gate charge (QG) allowing for Low Conduction and Switching loss. The device Normally-On Characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.