UF3N170400B7S Description
onsemi offers the High-Performance G3 SiC normally-On JFET transistors. This Series Exhibits Ultra-low on resistance (RDS(ON)) and Gate charge (QG) allowing for Low Conduction and Switching loss. The device Normally-On Characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
UF3N170400B7S Key Features
- Typical On-Resistance RDS(on), typ of 400 mW
- Voltage Controlled
- Maximum Operating Temperature of 175 C
- Extremely Fast Switching not Dependent on Temperature
- Low Gate Charge
- Low Intrinsic Capacitance
- This Device is Pb-Free, Halogen Free and is RoHS pliant