UF3N170400B7S Datasheet | onsemi

Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, D2PAK-7L, 1700 V, 400 mohm Description onsemi offers the High-Performance G3 SiC normally-On JFET transistors. This Series Exhibits Ultra-low on resistance (RDS(ON)) and Gate charge (QG) allowing for Low Conduction and Switching loss. The device Normally-On Characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. Features - Typical On-Resistance RDS(on), typ of 400 mW - Voltage Controlled - Maximum Operating Temperature of 175 C - Extremely Fast Switching not Dependent on Temperature - Low Gate Charge - Low...