Datasheet Details
| Part number | UF3SC120009K4S |
|---|---|
| Manufacturer | UnitedSiC |
| File Size | 487.59 KB |
| Description | SiC FET |
| Datasheet |
 UF3SC120009K4S Datasheet
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General Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Key Features
- 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 8.6mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.