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UF3SC120009K4S Datasheet 1200v Sic Cascode JFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247-4, 1200 V, 8.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the TO247-4 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.

Key Features

  • Typical On-resistance RDS(on), typ of 8.6 mW.
  • Maximum Operating Temperature of 175 °C.
  • Excellent Reverse Recovery.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • TO247-4 Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

UF3SC120009K4S from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
UnitedSiC Logo UF3SC120009K4S SiC FET UnitedSiC

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