UF3SC120009K4S Datasheet | onsemi

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-4, 1200 V, 8.6 mohm Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO247-4 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Features - Typical...