UF3SC120009K4S Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO247-4 package, this device exhibits ultra-low gate charge and...
UF3SC120009K4S Key Features
- Typical On-resistance RDS(on), typ of 8.6 mW
- Maximum Operating Temperature of 175 °C
- Excellent Reverse Recovery
- Low Gate Charge
- Low Intrinsic Capacitance
- ESD Protected, HBM Class 2
- TO247-4 Package for Faster Switching, Clean Gate Waveforms
- This Device is Pb-Free, Halogen Free and is RoHS pliant