UF4SC120023B7S
Description
Tab
1 7
G (1) KS (2)
D (Tab) S (3-7)
Part Number UF4SC120023B7S
Package D2PAK-7L
Marking UF4SC120023B7S
The UF4SC120023B7S is a 1200V, 23mΩ G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal redesign when replacing Si IGBTs, Si superjunction devices or Si C MOSFETs. Available in the space-saving D2PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features w On-resistance RDS(on): 23m W (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 243 n C w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8n C w Threshold voltage...
