UF4SC120023B7S - 1200V SiC Cascode JFET

UnitedSiC

General Description

The UF4SC120023B7S is a 1200V, 23mΩ G4 SiC FET.

Key Features

w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 243 nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w D2PAK-7L package for faster switching, clean gate waveforms Typical.

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UF4SC120023B7S 1200v sic cascode jfet by UnitedSiC - Datasheet Preview

Datasheet Details

Part number	UF4SC120023B7S
Manufacturer	UnitedSiC
File Size	1.42 MB
Description	1200V SiC Cascode JFET
Datasheet	UF4SC120023B7S Datasheet

Other Datasheets by UnitedSiC

Part Number	Description
UF4SC120023K4S	1200V SiC Cascode JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Part Number UF4SC120023B7S Package D2PAK-7L Marking UF4SC120023B7S The UF4SC120023B7S is a 1200V, 23mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal redesign when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.