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UF4SC120023B7S - 1200V SiC Cascode JFET

Datasheet Summary

Description

The UF4SC120023B7S is a 1200V, 23mΩ G4 SiC FET.

Features

  • w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 243 nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w D2PAK-7L package for faster switching, clean gate waveforms Typical.

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Datasheet Details

Part number UF4SC120023B7S
Manufacturer UnitedSiC
File Size 1.42 MB
Description 1200V SiC Cascode JFET
Datasheet download datasheet UF4SC120023B7S Datasheet
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Full PDF Text Transcription

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DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Part Number UF4SC120023B7S Package D2PAK-7L Marking UF4SC120023B7S The UF4SC120023B7S is a 1200V, 23mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal redesign when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.
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