UF4SC120023K4S
Description
The UF4SC120023K4S is a 1200V, 23m W G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
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Part Number UF4SC120023K4S
G (4) KS (3)
Package TO-247-4L
Features
S (2)
Marking UF4SC120023K4S w On-resistance RDS(on): 23m W (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 341n C w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8n C w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM...
