UJ3N065025K3S Datasheet | UnitedSiC

Description United Silicon Carbide, Inc offers the high-performance G3 Si C normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. CASE G (1) CASE D (2) Part Number UJ3N065025K3S S (3) Package TO-247-3L Marking UJ3N065025K3S Features w Typical on-resistance RDS(on),typ of 25m W w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w Ro HS pliant Typical Applications w Over current protection circuits w DC-AC inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Maximum Ratings Parameter Symbol Test Conditions Drain-source voltage Gate-source voltage AC (1) Continuous drain current (2) Pulsed drain current (3) Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds IDM Ptot TJ,max TJ, TSTG TC = 25°C TC = 100°C TC = 25°C TC=25°C (1) +20V AC rating applies for turn-on pulses <200ns applied with external RG > 1W. (2) Limited by TJ,max (3) Pulse width tp limited by TJ,max Value 650 -20 to +3 -20 to +20 85 62 250 441 175 -55 to 175 Units V A A A W °C °C °C Rev. B, December 2018 For more information go to .unitedsic.. 25m W - 650V Si C Normally-On JFET | UJ3N065025K3S Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical...