UJC1210K - MOSFET

Datasheet Summary

Description

United Silicon Carbide's cascode products co-package its xJ series highperformance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

w Max. on-resistance RDS(on)max of 100mW w Standard 12V gate drive w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical.

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Datasheet Details

Part number	UJC1210K
Manufacturer	UnitedSiC
File Size	433.17 KB
Description	MOSFET
Datasheet	UJC1210K Datasheet
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xJ SiC Series | 100mW - 1200V SiC Cascode | UJC1210K Datasheet Description United Silicon Carbide's cascode products co-package its xJ series highperformance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. CASE G (1) CASE D (2) 123 S (3) Part Number UJC1210K Package TO-247-3L Marking UJC1210K Features w Max.

Published: Apr 15, 2020 |